Effect of C∕Si ratio on deep levels in epitaxial 4H–SiC
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چکیده
منابع مشابه
Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle
We grew epitaxial layers on 4H-silicon carbide (SiC) Si-face substrates with a 1° off-angle. The suppression of 3C-inclusion formation during growth at a high C/Si ratio was investigated, because a growth technique with a high C/Si ratio is needed to decrease residual nitrogen incorporation. 3C inclusions were generated both at the interface between the substrate and epitaxial layer, and during...
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The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall chemical vapour deposition (CVD) reactor with growth rates higher than 100 mm/h. The addition of chlorinated species to the gas mixture prevents silicon nucleation in the gas phase, thus allowing higher input flows of the precursors resulting in much higher growth rate...
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